 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| Si1902DL Vishay Siliconix Dual N-Channel 20-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) 20 rDS(on) () 0.385 at VGS = 4.5 V 0.630 at VGS = 2.5 V ID (A) 0.70 0.54 FEATURES * TrenchFET(R) Power MOSFETS: 2.5 V Rated Pb-free Available RoHS* COMPLIANT SOT-363 SC-70 (6-LEADS) S1 1 6 D1 M a r k Code Markingin g C o d e P A XX PA YY YY Lot Traceability LotT and Date Code Part # Code G1 2 5 G2 D2 3 4 S2 Top View Ordering Information: SI1902DL-T1 (with Tape and Reel) SI1902DL-T1-E3 (Lead (Pb)-free with Tape and Reel) ABSOLUTE MAXIMUM RATINGS TA = 25 C, unless otherwise noted Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150 C)a Pulsed Drain Current Continuous Source Current (Diode Conduction)a Maximum Power Dissipationa Operating Junction and Storage Temperature Range TA = 25 C TA = 85 C TA = 25 C TA = 85 C Symbol VDS VGS ID IDM IS PD TJ, Tstg 0.25 0.30 0.16 - 55 to 150 0.70 0.50 1.0 0.23 0.27 0.14 W C 5 secs 20 12 0.66 0.48 A V Steady State Unit THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambienta Maximum Junction-to-Foot (Drain) Notes a. Surface Mounted on 1" x 1" FR4 Board. * Pb containing terminations are not RoHS compliant, exemptions may apply t 5 sec Steady State Steady State Symbol RthJA RthJF Typical 360 400 300 Maximum 415 460 350 C/W Unit Document Number: 71080 S-51415-Rev. H, 03-Apr-06 www.vishay.com 1 Si1902DL Vishay Siliconix SPECIFICATIONS TJ = 25 C, unless otherwise noted Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currenta Drain-Source On-State Resistancea Forward Transconductancea Diode Forward Voltagea Dynamicb Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Rise Time Turn-Off DelayTime Fall Time Source-Drain Reverse Recovery Time Qg Qgs Qgd td(on) tr td(off) tf trr IF = 0.23 A, di/dt = 100 A/s VDD = 10 V, RL = 20 ID 0.5 A, VGEN = 4.5 V, RG = 6 VDS = 10 V, VGS = 4.5 V, ID = 0.66 A 0.8 0.06 0.30 10 16 10 10 20 20 30 20 20 40 ns 1.2 nC VGS(th) IGSS IDSS ID(on) rDS(on) gfs VSD VDS = VGS, ID = 250 A VDS = 0 V, VGS = 12 V VDS = 16 V, VGS = 0 V VDS = 16 VGS = 0 V, TJ = 85C VDS 5 V, VGS = 4.5 V VGS = 4.5 V, ID = 0.66 A VGS = 2.5 V, ID = 0.40 A VDS = 10 V, ID = 0.66 A IS = 0.23 A, VGS = 0 V 1.0 0.320 0.560 1.5 0.8 1.2 0.385 0.630 0.6 1.5 100 1 5 A A S V V nA Symbol Test Conditions Min Typ Max Unit Notes: a. Pulse test; pulse width 300 s, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. TYPICAL CHARACTERISTICS TA = 25 C, unless otherwise noted 1.0 VGS = 5 thru 2.5 V 0.8 I D - Drain Current (A) 0.8 1.0 2V 0.6 I D - Drain Current (A) 0.6 0.4 0.4 TC = 125 C 0.2 25 C - 55 C 0 .0 0.0 0.2 1.5 V 1V 0.0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 0 .5 1.0 1.5 2.0 2.5 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) Output Characteristics Transfer Characteristics www.vishay.com 2 Document Number: 71080 S-51415-Rev. H, 03-Apr-06 Si1902DL Vishay Siliconix TYPICAL CHARACTERISTICS TA = 25 C, unless otherwise noted 1.0 100 r DS(on) - On-Resistance () C - Capacitance (pF) 0.8 80 Ciss 60 0.6 VGS = 2.5 V 0.4 VGS = 4.5 V 40 Coss 0.2 20 Crss 0.0 0.0 0 0.2 0.4 0.6 0.8 1.0 0 4 8 12 16 20 ID - Drain Current (A) VDS - Drain-to-Source Voltage (V) On-Resistance vs. Drain Current 5 VGS - Gate-to-Source Voltage (V) VDS = 10 V ID = 0.66 A 4 r DS(on) - On-Resistance (Normalized) 1.4 1.6 VGS = 4.5 V ID = 0.66 A Capacitance 3 1.2 2 1.0 1 0.8 0 0.0 0.2 0.4 0.6 0.8 0.6 - 50 - 25 0 25 50 75 100 125 150 Qg - Total Gate Charge (nC) TJ - Junction Temperature (C) Gate Charge 1 1.0 On-Resistance vs. Junction Temperature r DS(on) - On-Resistance () 0.8 ID = 0.66 A I S - Source Current (A) TJ = 150 C 0.6 0.4 TJ = 25 C 0.2 0.1 0.0 0.0 0.2 0.4 0.6 0.8 1.0 1.2 0 1 2 3 4 5 VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V) Surge-Drain Diode Forward Voltage Document Number: 71080 S-51415-Rev. H, 03-Apr-06 On-Resistance vs. Gate-to-Source Voltage www.vishay.com 3 Si1902DL Vishay Siliconix TYPICAL CHARACTERISTICS TA = 25 C, unless otherwise noted 0.2 5 0.1 V GS(th) Variance (V) ID = 250 A - 0.0 Power (W) 3 4 - 0.1 - 0.2 2 - 0.3 1 - 0.4 - 50 - 25 0 25 50 75 100 TJ - Temperature (C) 125 150 0 10-3 10-2 10-1 1 Time (sec) 10 100 600 Threshold Voltage 2 1 Duty Cycle = 0.5 Single Pulse Power, Junction-to-Ambient Normalized Effective Transient Thermal Impedance 0.2 Notes: 0.1 0.1 0.05 0.02 PDM t1 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = R thJA = 400 C/W Single Pulse 0.01 10-4 10-3 1 0 -2 10-1 1 Square Wave Pulse Duration (sec) 3 . T M - TA = PDMZthJA(t) J 4. Surface Mounted 10 100 600 Normalized Thermal Transient Impedance, Junction-to-Ambient www.vishay.com 4 Document Number: 71080 S-51415-Rev. H, 03-Apr-06 Si1902DL Vishay Siliconix TYPICAL CHARACTERISTICS TA = 25 C, unless otherwise noted 2 1 Duty Cycle = 0.5 Normalized Effective Transient Thermal Impedance 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10-4 10-3 10-2 10-1 Square Wave Pulse Duration (sec) 1 10 Normalized Thermal Transient Impedance, Junction-to-Foot Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?71080. Document Number: 71080 S-51415-Rev. H, 03-Apr-06 www.vishay.com 5 Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, "Vishay"), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay's terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 18-Jul-08 www.vishay.com 1 |
Price & Availability of SI1902DL-T1
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |